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MITSUBISHI SiC MOSFET Module –
Upgrade in the same NX layout for a fast and seamless transition

Power supply systems, energy storage, motor and industrial drives, photovoltaic inverters, charging infrastructure for electric vehicles:

MITSUBISHI’s NX modules (122 × 62 mm) are used successfully around the world in many high-power applications. The NX package is considered an industry standard for robust, reliable, and thermally optimized power modules.

As a developer, you can now take full advantage of the benefits offered by SiC technology.

MITSUBISHI makes the transition easy with a 1:1 drop-in replacement—no layout changes required:

• Noticeably higher efficiency
  The planar G2A SiC generation drastically reduces switching and conduction losses. This lowers heat generation and power consumption—a direct advantage for compact designs and reduced operating costs.
• Faster switching for demanding designs
  With only 9 nH of parasitic inductance, the modules enable precise, high-frequency switching with stable EMC performance. Ideal for medical power supplies, where signal integrity and immunity to interference are essential.
• More power in less space
  With 1200 V and 1700 V at 600 A each, UPS systems, energy storage solutions, and motor drives can be designed significantly more compact and more powerful. Cooling systems can also be smaller—the efficiency of SiC technology makes it possible.
• Longer service life & high robustness
  MITSUBISHI’s enhanced gate-oxide technology increases reliability in continuous operation. For developers, this means higher system availability, lower maintenance costs, and a design built for long-term durability.

Why choose SiC here?

Because this technological step delivers clear and measurable advantages:

• Fewer losses = more output per watt
• Less heat = smaller, more cost-efficient cooling systems
• Faster switching = higher power density
• Greater reliability = long-term operational safety

Technical summary and evaluation:

SiC technology enables solutions that can no longer be achieved with silicon. The current planar SiC MOSFET generation (G2A) impresses with exceptionally low switching and conduction losses. Thanks to an optimized module design with only 9 nH parasitic inductance, even demanding high-frequency designs can be implemented reliably and with stable EMC performance. This is particularly advantageous for applications such as medical power supplies, where precise switching behavior and clean EMC characteristics are essential.

In UPS systems, energy storage solutions, and motor drives, the modules also enable more compact designs, higher output power, and more efficient cooling systems. Furthermore, Mitsubishi uses an enhanced material quality for its gate oxide technology, significantly increasing long-term reliability in continuous operation—an important factor for developers who depend on high durability and robust system performance.

You can find additional technical information via the following links:

• Datasheet 1200V / 600A: FMF600DXE-24BN
• Datasheet 1700V / 600A: FMF600DXE-34BN
• Application Note: Industrial Full SiC Power Module

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