Higher storage density, thanks to BiCS FLASH™ 3D technology:
KIOXIA e-MMC for industry

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The demand for higher storage capacities is growing in all segments of the consumer and industrial markets. The demand for cost-optimised and technologically optimised storage solutions for the continuous development of competitive products is also increasing.

KIOXIA, formerly TOSHIBA Memory, is now offering its BiCS FLASH™ 3D flash memory technology in its e-MMC memory systems. Executed in the reliable charge trap cell structure, you obtain a cost-effective industrial solution for the JEDEC-standardised interface with long-term availability.

BiCS FLASH™ efficiently stores high data volumes

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Executed as a vertically stacked three-dimensional (3D) flash memory, BiCS FLASH™ has a far higher storage density on the die than the once ultra-modern 2D NAND flash memory.

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The space between the memory cells is considerably larger in BiCS FLASH™ memories than in 2D NAND flash memories. An increase in the programming speed and the volume of data transferred is provided in conjunction with a single-shot programming sequence.

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The extra space between the memory cells in the BiCS FLASH™ 3D technology reduces cell coupling. It increases reliability compared with the 2D NAND flash memory.

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The BiCS FLASH™ 3D technology reduces the power consumption of each programming data unit by increasing the volume of data for a single-shot programming sequence (equivalent to a higher programming speed) compared with the 2D NAND flash memory.

The advantages of the charge trap structure

Conventional e-MMC NAND flash memories use floating-gate cells for data storage.
KIOXIA uses charge trap cells to obtain a longer life and higher scalability of the memory. Memories with charge trap technology work considerably more reliably. They also offer a higher storage density per chip surface. They use less energy and are quicker to program.

This makes them perfect for use in industrial applications.

Overview of the KIOXIA e-MMCs based on the 2D NAND technology and the new BiCS FLASH™ 3D technology

Consumer Grade Temperature

Process Capacity Part Number e-MMC Version Max Data Rate (MB/s) Supply Voltage Operating Temperature
(℃)		 Package Size
(mm)
VCC (V) VCCQ (V)
FG NAND 4GB THGBMNG5D1LBAIT 5.0 400 2.7 to 3.6

1.70 to 1.95,
2.7 to 3.6

 -25 to 85 11.0x10.0x0.8
THGBMNG5D1LBAIL 11.5x13.0x0.8
8GB THGBMJG6C1LBAIL 5.1
16GB THGBMJG7C1LBAIL
32GB THGBMJG8C2LBAIL
BiCS 16GB THGAMRG7T13BAIL 5.1 400 2.7 to 3.6 1.70 to 1.95 -25 to 85 11.5x13.0x0.8
32GB THGAMRG8T13BAIL
64GB THGAMRG9T23BAIL
128GB THGAMRT0T43BAIR 11.5x13.0x1.0

Industrial Grade Temperature

Process Capacity Part Number e-MMC Version Max Data Rate (MB/s) Supply Voltage Operating Temperature
(℃)		 Package Size
(mm)
VCC (V) VCCQ (V)
FG NAND 8GB THGBMJG6C1LBAU7 5.1 400 2.7 to 3.6

1.70 to 1.95,
2.7 to 3.6

 -40 to 105(1) 11.5x13.0x1.0
16GB THGBMJG7C2LBAU8 11.5x13.0x1.2
32GB THGBMJG8C4LBAU8
64GB THGBMJG9C8LBAU8

Note (1) : Tc=115°C max.

This is KIOXIA - The Future of Memories

Further information on the new e-MMCs is available from the KIOXIA distributor GLYN on request.

Industrial Memory Solutions

Tel.
+49 6126 590-350
Fax
+49 6126 590-139
ims.sales@glyn.de

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