Flexible gate driver solution +++ Certified protective masks +++ MOSFETs with more performance, less heat

Efficient energy conversion –
Take note of U-MOS IX-H and U-MOS X-H MOSFETs
 
In the past, improvements in conductivity were achieved at the expense of poorer switching properties or vice versa. The latest trench technologies have broken through this conflict of interests. They make it possible to achieve better conductivity and a higher switching capacity at the same time.

Trench MOSFETs have evolved over several generations.
The size of chip cells has got incrementally smaller. The closer arrangement results in a lower transmission resistance per chip area. At the same time, the internal chip capacities are low. This improves the switching behaviour and reduces the load on the gate driver circuits.

Toshiba’s U-MOS IX-H and U-MOS X-H MOSFETs offer better R_DS(ON) x A (transmission resistance x active chip area) and R_DS(ON) x Ciss (transmission resistance x input capacitance) values. This leads to higher conductivity as well as lower gate driver losses. The reduced output capacitance (C_OSS) lowers the output charge (Q_OSS) and this increases the switching efficiency.

42% lower resistance – The optimum value among MOSFETs

The improvements of the new semiconductor processes ensure a 42 percent lower resistance compared to the UMOS VIII generation, among other things.
At R_DS(ON) x C_OSS, an important value for overall efficiency, TOSHIBA offers the best value on the market compared to its competitors for some types.

Improved housing with heat dissipation on both sides
 
New housing improves cooling and increases reliability.

TOSHIBA offers some of its UMOS IX-H power MOSFETs in the DSOP-Advance housing. These have the same footprint as the standard 5 mm x 6 mm SOP.

Inside, the source metallisation on the top of the chip is directly connected to a large electrode on the top of the housing. This means that heat is also dissipated via the top of the housing. The drain electrode on the bottom is considerably bigger than on a conventional SOP housing.

Thanks to heat dissipation on both sides (dual-side cooling) the heat management is significantly improved in space-saving applications.

In this way, DSOP-Advance modules help to reduce the temperature of the overall system. As a developer, this gives you more freedom in the design of the heat sink.

175 °C junction temperature
 
Starting with the ninth generation, TOSHIBA MOSFETs may be operated with a maximum junction temperature of 175 °C. This allows you to use a higher maximum current than with components that are only specified up to 150 °C.

Low-spike technology
 
TOSHIBA has optimised the switch-off behaviour of the UMOS-X and UMOS-IX generation. Here overvoltage spikes and oscillations are noticeably reduced. This leads to a significant increase in efficiency in the application and is more user-friendly with regards to EMC radiation.

Summary
 
TOSHIBA's U-MOS IX-H and U-MOS X-H MOSFETs are highly efficient components that help you achieve outstanding efficiency in the design of DC-DC converters, power supplies, chargers and BLDC motor controllers: reduced energy consumption and considerably reduced component temperatures. With the reduction of cooling expenditure, the costs are also reduced. Smaller heat sinks allow a higher packing density on the circuit board.
You can therefore build significantly smaller devices with higher energy efficiency.
The ecological footprint will also thank you.

You can find a complete overview of the available Low-Voltage MOSFET with U-MOS IX-H and U-MOS X-H MOSFETs here.

We will gladly answer your questions and enquiries: