FUJITSU ReRAM now in mass production:
Uses 94% less operating current than a comparable EEPROM

The FUJITSU ReRAM (Resistive Random-Access Memory) is a non-volatile memory with SPI interface.

Thanks to its low operating current of just 0.2 mA when reading at 5 MHz, the IC is ideally suited for battery-powered applications, e.g. wearables or medical products, such as hearing aids.

The ReRAM chip is operated with voltages of 1.65 to 3.6 V.
In comparison to a conventional non-volatile memory like EEPROM or Flash, ReRAM offers lower power consumption and a longer lifespan.
The ReRAM has an “unlimited read endurance” as well as a “write endurance” of 1,200,000 million cycles. 

The IC is available in an 8-pin SOP package (5.3 mm) and is therefore pin-compatible with other memories such as EEPROMs and Flash memories. The working temperature range of the ReRAMs lies between -40 and 85 °C.

The technical data of the MB85AS4MT:

  • Memory Density (configuration): 4 MBit (512 K words x 8 bits)
  • Interface: Serial peripheral interface (SPI)
  • Operating power supply voltage: 1.65 V - 3.6 V
  • Low power consumption:
    • Read operating current: 0.2 mA (at 5 MHz)
    • Write operating current: 1.3 mA (during write cycle time)
    • Standby current: 10 µA
    • Sleep current: 2 µA
  • Guaranteed write cycles: 1.2 million cycles
  • Guaranteed read cycles: Unlimited
  • Write cycle time (256 byte page): 16ms (with 100 % data inversion)
  • Data retention: 10 years (up to 85 °C)
  • Package: 209 mil 8-pin SOP

Ideal application fields:
• Battery-operated wearables
• Medical products like hearing aids
• Security technology, like electronic combination locks
• IoT applications
• Sensor applications
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