GLYN – High-Tech Distribution

Ferroelectric RAM (FRAM)

FRAMs combine all the advantages of non-volatile storage. MCUs with FRAM can eliminate the distinction between ROM and RAM.
Long lifetimes paired with high speed – the best references for your product.

Advantages of FRAM:

• Non-volatile storage
• 25 times faster than EPROM
• Radiation resistance
• Long lifetime. 10 billion read/write cycles
• 10 years data retention
• Very low power consumption
• 8/16-bit parallel interface
• 25MHz SPI interface
• 400kHz / 1MHz I2C interface
• Up to 4Mbit memory density

The following Fujitsu products are based on FRAM technology:

FRAM MCU
The MB95Rxxx family

Standalone FRAM
Individual FRAM components with serial or parallel connection

RFID FRAM
Combination of RF tags and non-volatile storage

Link: Fujitsu Homepage FRAM